Harrier L

Large batch ALD system for SiN-based
spacer and cap applications

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Proven SiN performance at production scale

Harrier L is a large-batch ALD system engineered for high-throughput deposition of spacer nitride, capping nitride, and hard mask nitride layers. With both thermal ALD and PE-ALD capabilities, it enables versatile integration into logic and memory flows, while delivering exceptional film uniformity and long-time between cleaning intervals.

Key features

Supports Thermal ALD SiN, PE-ALD SiN, and LPCVD SiN/SiO₂
Designed for capping, spacer, and HM nitride applications in advanced nodes
Superior WIW uniformity backed by production data (e.g. 315 WPD vs 232 WPD competitors)
Long dry/wet cleaning intervals reduce downtime and improve fab efficiency

Applications

Memory

From high-speed DRAM to high-density 3D NAND, our systems are trusted in high-volume production by leading memory fabs.

Logic

For leading-edge logic nodes and GAA transistors, our ALD solutions enable precise film control and low-defect integration.

Explore how we’re building trust and efficiency across every touchpoint – from silicon to software

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