Lassen

Time-divisional ALD platform for complex
dielectric film stacks

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Precision layering for next-generation dielectrics

Lassen is designed for the time-divisional processing of complex oxide films. It enables stationary wafer deposition with pulse-separated chemistry, making it ideal for precise multi-component dielectric stacks. Developed for applications involving ZrO, HfO, AlO, MoO, LaO, and TiO, Lassen supports advanced memory and logic integration with high uniformity, flexibility, and throughput.

Key features

Time-divisional ALD platform with single-wafer, multi-station architecture
Optimized for dielectric materials such as ZrO, AlO (low growth rate), MoO, LaO, TiO, and HfO
Stationary wafer design with cone liner and symmetric vent lines for consistent gas distribution
>100% step coverage enabled by inhibitor-based deposition
Advanced showerhead temperature control and multi zone clamshell heaters for high uniformity
Fast pulse/purge cycling and high throughput; excellent station-to-station matching

Applications

Memory

From high-speed DRAM to high-density 3D NAND, our systems are trusted in high-volume production by leading memory fabs.

Logic

For leading-edge logic nodes and GAA transistors, our ALD solutions enable precise film control and low-defect integration.

Power devices

Power electronics demand durability, uniformity, and material versatility – and our tools deliver.

Emerging Memories

Emerging memory technologies need new materials, enabled by Lassen.

Explore how we’re building trust and efficiency across every touchpoint – from silicon to software

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