A new solution for semiconductor
manufacturing

Materials solutions for memory, logic,
power and emerging memory applications

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Innovation and disruption are ingrained in our DNA

Eugenus innovates disruptive deposition systems that enable the AI era to meet the demands of today’s and tomorrow’s advanced device architectures.

Whether it's enabling extreme step coverage in memory capacitors, material tuning in GAA transistors, barrier integrity in power devices, or compositional control for ferroelectric films, our tools are developed with the customer’s end-application in mind.

Specialized applications

Memory Manufacturing

From high-speed DRAM to ultra-dense 3D NAND, our ALD and CVD platforms are built for reliability at scale.

The increasing demand for higher-density DRAM and vertically stacked 3D NAND is pushing the limits of process technology. As device architectures become more complex, achieving conformal films over extreme aspect ratios has become significantly more challenging. Manufacturers must also maintain tight within-wafer uniformity, minimize process variability, and meet aggressive throughput targets – all without compromising on material integrity or yield.
The Eugenus advantage:
  • Eugenus platforms are already in production at global memory fabs.
  • Industry-leading film uniformity and step coverage for barrier, electrode and dielectric layers.
  • Full-stack solution optimized for memory performance, process stability, and scale.
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Logic

We deliver the precision needed for new materials and tighter geometries, for today’s most advanced logic nodes.

Sub-5nm nodes and Gate-All-Around (GAA) architectures are driving the need for ultra-precise gate stack engineering. As process integration becomes more complex, manufacturers face mounting pressure to achieve low defects and maintain tight control over interface quality. At the same time, accelerated production timelines demand low variability and high repeatability across wafers – leaving little room for compromise in performance or yield.
The Eugenus advantage:
  • Platforms engineered to support advanced logic nodes, including GAA and HKMG architectures.
  • Reliable deposition of LaOx, TiN, and high-k films with excellent conformality and repeatability.
  • Specialized tools that enable scaling with confidence.
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Power Devices

Power electronics demand rugged reliability and material flexibility.

Power devices are expected to deliver high performance under extreme thermal and electrical loads – a challenge that demands exceptional materials and process control. Manufacturers must deposit durable, stable films across larger dies and thicker wafers – often without sacrificing throughput or precision. Ensuring high film integrity and long-term process reliability is critical to meeting the stringent demands of power semiconductor applications.
The Eugenus advantage:
  • Platforms optimized for barrier and dielectric deposition in power devices.
  • Stable film properties and extended uptime – key for high-throughput, high-yield production.
  • Reliability, material versatility and thermal performance at scale.
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Emerging Memories

As memory technologies evolve, Emerging memory devices present new material and integration challenges.

Emerging memory devices require ultra-thin, multi-component oxide films with precise composition control – a challenge that pushes the boundaries of materials engineering. Ensuring uniformity, minimizing leakage, and enabling reliable switching across wafers adds further complexity – especially as traditional deposition tools often fall short in delivering the precision these applications demand.
The Eugenus advantage:
  • Platform purpose-built for precise, time-divisional ALD of complex oxide stacks like LaO, HfO, and MoO.
  • Atomic-level control and superior uniformity across wafers and cycles.
  • Designed for innovation and scale, supports reliable ferroelectric integration.
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Explore how we can build smarter, cleaner, and more secure semiconductor solutions together.