Lower thermal budget than traditional furnaces – ideal for advanced nodes
Excellent uniformity control knobs for tight spec layers
Four-chamber system with modular flexibility; process changes require only gas modification
Long in-situ clean (ISC) and wet clean intervals for high output
Up to 56 WPH for SiGe and 40 WPH for liner Si
Supports doped poly, SiGe, Si EPI, and more