Sierra

High-step coverage ALD for
advanced metal deposition

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Metal ALD system for low resistivity, high WF materials: TiN/TSN/VN

Sierra is designed for applications that demand high aspect ratio step coverage – from capacitor electrodes in memory to barrier layers in advanced logic devices. It supports a wide range of materials, including TiN, TSN, and VN, with superior station-to-station repeatability.

Key features

High step coverage >98%
Low-resistivity VN, TiN, and TSN films
Tunable process windows for Rs, thickness, and composition
Excellent station-to-station uniformity
Field-proven in both memory and power applications
Proven electrical performance (capacitance, leakage)

Applications

Memory

From high-speed DRAM to high-density 3D NAND, our systems are trusted in high-volume production by leading memory fabs.

Logic

For leading-edge logic nodes and GAA transistors, our ALD solutions enable precise film control and low-defect integration.

Power devices

Power electronics demand durability, uniformity, and material versatility – and our tools deliver.

Explore how we’re building trust and efficiency across every touchpoint – from silicon to software

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