IXP CVD

Production-proven performance and flexible architecture for thermal metal CVD films

 

The IXP CVD single wafer process system offers excellent film uniformity, film composition control, and repeatability with the unique combination of multi-zone showerhead and high temperature capability. With high throughput and low CoO, the IXP CVD systems enables high volume manufacturing (HVM) with >90% availability in semiconductor fabs.

 

Key Features

 

  • Multi-zone showerhead with zone control
     

  • Modular single-wafer process module architecture (up to four precess modules) with state-of-the-art control systems
     

  • High temperature process >600°C
     

  • High quality thermal CVD films with no plasma damage to the substrate
     

  • High-vacuum configuration available to prevent film oxidation

IXP CVD APPLICATIONS

LOGIC

  • Silicides and silicidation films

  • Diffusion barrier films

  • Metallic seed layers

  • Sacrificial hardmask/patterning metal films

NAND

  • Diffusion barrier films

  • Poly-adhesion layers

  • Sacrificial hardmask/patterning metal films

DRAM

  • Diffusion barrier films

  • Poly and contact adhesion films

  • Metallic seed layers

  • Sacrificial hardmask/patterning metal films

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