Key Features

 

  • Multi-zone showerhead with zone control
     

  • Modular single-wafer process module architecture (up to four precess modules) with state-of-the-art control systems
     

  • High temperature process >600°C
     

  • High quality thermal CVD films with no plasma damage to the substrate
     

  • High-vacuum configuration available to prevent film oxidation

IXP CVD APPLICATIONS

LOGIC

  • Silicides and silicidation films

  • Diffusion barrier films

  • Metallic seed layers

  • Sacrificial hardmask/patterning metal films

NAND

  • Diffusion barrier films

  • Poly-adhesion layers

  • Sacrificial hardmask/patterning metal films

DRAM

  • Diffusion barrier films

  • Poly and contact adhesion films

  • Metallic seed layers

  • Sacrificial hardmask/patterning metal films